dmn601dwk document number: ds30656 rev. 8 - 2 1 of 6 www.diodes.com march 2015 ? diodes incorporated dmn601dwk new product dual n - channel enhancement mode field effect transistor product summary v (br)dss r ds(on) max i d max t a = + 25 c 6 0v 3 ? @ v gs = 5 v 0.3a description this mosfet is designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? motor c ontrol ? power management functions features ? dual n - channel mosfet ? low on - resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? ultra - small surface mount package ? esd protected up to 2kv ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? case: sot363 ? case material: molded plastic. green molding compound ; ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: matte tin finish a nnealed over alloy 42 leadframe (lead - free plating). solderable per mil - std - 202, method 208 ? terminal connections: see diagram ? weight: 0.006 grams ( a pproximate) ordering information (note 4 ) part number case packaging dmn601dwk - 7 sot 363 3 , 000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information date code key year 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 code s t u v w x y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot363 top view top view internal schematic k7k = product type marking code ym = date code marking y or y = year (ex: a = 201 3 ) m = m onth (ex: 9 = september) equivalent circuit sot363 esd protected up to 2kv k7k ym s 1 d 2 g 1 d 1 s 2 g 2 k 7 k y m d s g g ate protection diode s 1 d 1 d 2 s 2 g 1 g 2
dmn601dwk document number: ds30656 rev. 8 - 2 2 of 6 www.diodes.com march 2015 ? diodes incorporated dmn601dwk new product maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain source voltage v dss 60 v gate - source voltage v gss ? d 305 800 ma pulsed (note 6 ) thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 5 ) p d 200 mw thermal resistance, junction to ambient r ja 625 c /w operating and storage temperature range t j , t stg - 65 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 60 ? ? gs = 0v, i d = 10 a zero gate voltage drain current i dss ? ? ds = 60v, v gs = 0v gate - source leakage i gss ? ? ? gs = ? ds = 0v on characteristics (note 7 ) gate threshold voltage v gs(th) 1.0 1.6 2.5 v v ds = 10v, i d = 1ma static drain - source on - resistance r ds(on) ? ? ? gs = 10v, i d = 0.5a v gs = 5v, i d = 0.05a forward transfer admittance |y fs | 80 ? ? ds =10v, i d = 0.2a diode forward voltage (note 8 ) v sd 0.5 ? gs = 0v, i s = 115ma dynamic characteristics input capacitance c iss ? ? ds = 25v, v gs = 0v f = 1.0mhz output capacitance c oss ? ? rss ? ? notes: 5 . device mounted on fr - 4 pcb. 6 . pulse width ? 10 s, duty cycle ? 1%. 7 . short duration pulse test used to minimize self - heating effect.
dmn601dwk document number: ds30656 rev. 8 - 2 3 of 6 www.diodes.com march 2015 ? diodes incorporated dmn601dwk new product 0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 v , drain-source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 1.2 1.4 3v 4v 6v 8v 10v v = 10v 8v 6v 5v 4v 3v gs 5v v , gate-source voltage (v) figure 2 typical transfer characteristics gs 0.01 0.10 1.00 1 1.5 2 2.5 3 3.5 4 4.5 5 i , d d r a i n c u r r e n t ( a ) t = 125 c a t = 25 c a t = -25 c a t = 75 c a v = 10v pulsed ds t , channel temperature (c) figure 3 gate threshold voltage vs. channel temperature ch 0 0.5 1 1.5 2 -50 -25 0 25 50 75 100 125 150 v g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) , v = 10v i = 1ma pulsed ds d 0.1 i drain current (a) figure 4 static drain-source on-resistance vs. drain current d , 1 10 0.001 0.01 0.1 1 t = 150 c a t = 125 c a t = 85 c a t = -55 c a t = 25 c a t = 0 c a t = -25 c a v = 10v pulsed gs r , s t a t i c d r a i n s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 1 i , drain current (a) figure 5 static drain-source on-resistance vs. drain current d 10 0.1 1 0.001 0.01 0.1 v = 5v pulsed gs t = 150 c a t = 125 c a t = 85c a t = 25 c a t = -25 c a t = 0 c a r , s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 v gate source voltage (v) figure 6 static drain-source on-resistance vs. gate-source voltage gs, 1 2 3 4 5 6 7 0 2 4 6 8 10 12 14 16 18 20 i = 300ma d i = 150ma d t = 25c pulsed a r , s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ?
dmn601dwk document number: ds30656 rev. 8 - 2 4 of 6 www.diodes.com march 2015 ? diodes incorporated dmn601dwk new product 0 t , channel temperature ( c) figure 7 ch static drain-source on-state resistance vs. channel temperature 0.5 1 1.5 2 2.5 -75 -50 -25 0 25 50 75 100 125 150 v = 10v pulsed gs i = 300ma d i = 150ma d r , s t a t i c d r a i n s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , r e v e r s e d r a i n c u r r e n t ( a ) d r 0.001 0.01 0.1 1 0 0.5 1 1.5 v , figure 8 reverse drain current vs. source-drain voltage sd source-drain voltage (v) v = 0v pulsed gs t = -55 c a t = 150c a t = 125 c a t = 85 c a t = 25 c a t = 0 c a t = -25 c a 1 0.001 0.01 0.1 1 0 0.5 i , r e v e r s e d r a i n c u r r e n t ( a ) d r v , figure 9 reverse drain current vs. source-drain voltage sd source-drain voltage (v) v = 0v gs v = 10v gs t = 25c pulsed a 1 i , drain current (a) d figure 10 forward transfer admittance vs. drain current | y | , f o r w a r d t r a n s f e r a d m i t t a n c e ( s ) f s 0.001 0.01 0.1 v = 10v pulsed gs t = 25 c a t = a -55 c t = a 150 c t = a 85 c v , drain-source voltage (v) ds figure 11 soa, safe operation area i , d r a i n c u r r e n t ( a ) d 0.001 0.01 0.1 1 10 0.1 1 10 100 t = 150c j(m ax) t = 25c a v = 10v gs single pulse dut on 1 * mrp board r ds(on) limited dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w
dmn601dwk document number: ds30656 rev. 8 - 2 5 of 6 www.diodes.com march 2015 ? diodes incorporated dmn601dwk new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. sot363 dim min max typ a 0.10 0.30 0.25 b 1.15 1.35 1.30 c 2.00 2.20 2.10 d 0.65 typ f 0.40 0.45 0.425 h 1.80 2.20 2.15 j 0 0.10 0.05 k 0.90 1.00 1.00 l 0.25 0.40 0.30 m 0.10 0.22 0.11 ? ? all dimensions in mm dimensions value (in mm) z 2.5 g 1.3 x 0.42 y 0.6 c 1.9 e 0.65 x z y c e e g a m j l d b c h k f
dmn601dwk document number: ds30656 rev. 8 - 2 6 of 6 www.diodes.com march 2015 ? diodes incorporated dmn601dwk new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of t his document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application , customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes in corporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect it s safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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